140-220 GHz Imaging Front-end Based on 250 nm InP/InGaAs/InP DHBT Process

نویسندگان

  • V. Vassilev
  • H. Zirath
  • V. Furtula
  • Y. Karandikar
  • K. Eriksson
چکیده

This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector, all integrated onto the same circuit. Results of measured responsivity and noise are presented. The receiver is characterized through measuring its response to hot (293) and cold (78) K terminations. Measurements of the voltage noise spectrum at the video output of the receiver are presented and can be used to derive the temperature resolution of the receiver for a specific video bandwidth.

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تاریخ انتشار 2013